Growing ⁴He crystals

Abstract

⁴He crystal growth was observed using an interdigital capacitor, an external pressure sensor and an internal pressure sensor. The internal and external pressure sensors were used in the measurement of overpressurization and constant pressure regimes. These regimes are indicators of ⁴He crystallization. The interdigital capacitor was used as a level detector to study the edge height of the ⁴He crystal.